| 摘要 |
PURPOSE:To enhance the photoelectric conversion efficiency of a solar battery by forming 2.10<17>/cm<3>-2.10<18>/cm<3> of carrier density of an N type GaAs substrate, stably form a P-N junction and reducing the leakage current in the vincinity of the junction. CONSTITUTION:Ga, GaAs, Al, Zn are filled in the melting liquid tank of a jig having a substrate container and a melting liquid tank, and N type GaAs substrate 1 of 2.10<17>/cm<3>-2.10<18>/cm<3> of carrier density doped with Si is contained in the substrate container. Then, the jig is filled in a reacrtion tube, is substituted for H2 gas, is heated to 800 deg.C while flowing H2 gas, Zn is diffused from Ga molten liquid to the substrate 1 to form a P type GaAs layer 2, and then is lowered by 10-20 deg.C to form P type Ga1-xAlxAs layer 4. Eventually, P type ohmic electrode 5 of Au/-Zn, N type ohmic electrode 6 of Au-Ge-Ni and reflecting preventive film 7 of SiO are sequentially deposited. |
