P-N JUNCTION DEVICES HAVING IMPROVED TURN-OFF CHARACTERISTICS

摘要

P-N JUNCTION DEVICES HAVING IMPROVED TURN-OFF CHARACTERISTICS A junction semiconductor device having improved turn-off characteristics and especially having decreased turn-off time is provided having a region of limited extent included in the device and characterized by decreased excess carrier lifetime. The decreased lifetime region is located at or near the point of highest excess carrier concentration during the recombination phase of device turn-off.