| 摘要 |
PURPOSE:To manufacture a microminiature SIT or the like in the self-aligning step by sidewisely etching the upper layer film of three-layer film having a nitrided film of the lower layer to partition a main electrode region, selectively oxidizing it, then sidewisely etching the nitrided film and providing a control electrode region. CONSTITUTION:A nitrided film 8, a polysilicon film 9 and an oxidized film 7 are accumulated on an N<-> type layer 13, for example, on an N<+> type substrate 12, the films 7, 9 out of the element region are removed with a resist film 6, is then sidewisely etched, and the film 7 is retained in the drain region. Then, it is selectively oxidized to retain the film 9, oxidized films 17, 27 are formed, the film 8 is sidewisely etched, and a gate region is opened. P<+> type impurity is introduded to the hole, the exposed parts of the films 27, 8 are removed, and selectively oxidized, and a P<+> type layer 14 and an oxidized film 37 are formed. Subsequently, the films 37, 8 are removed, a drain region 11 is formed of N<+> type polysilicon 1, a gate electrode is connected to the gate electrode, and an SIT is thus completed. This configuration can also be formed similarly by changing the accumulating sequence of the films 7 and 9 and sidewisely etching the polysilicon, and can also be applied to the steps of forming the element except the SIT. |
