| 摘要 |
PURPOSE:To provide a voltage detecting circuit having simplicity, high-resolution, and thermal compensation by connecting the input of a voltage comparator to a part of the resistor provided with the thermal characteristics capable of correcting the thermal characteristics of an FET. CONSTITUTION:In order to compensate the thermal characteristics of a P-channel transistor TR32 as a voltage level corrector by means of the FET, a circuit provided with diffusion resistors of N and P types, a resistor 33 made as a monolithic device in an IC and placed in front of a resistor which is connected to any outside parts, one or more of mutual supplemental type invertors as a voltage comparator connected to the diffusion resistors so as to improve the voltage detection resolution, wherein a channel length of the first stage invertor of the mutual supplemental type is so extended as to improve its sensitivity. Thereby, simplicity, high resolving power and temp. compensation of the device are ensured, as well as improving IC designing, its productivity and yield. |
