| 摘要 |
PURPOSE:To obtain the semiconductor memory storage having a small capacity of bit wire and a large read-out potential difference by a method wherein the first layer of polycrystalline silicon is used as a capacitor and a set wire, and the second layer is used as the gate electrode of MOSFET. CONSTITUTION:A polycrystalline silicon layer 10 is electrically connected to an N type semiconductor region 3 which forms m-th bit wire and a polycrystalline silicon layer 11 is electrically connected to an N type semiconductor region which forms m+1th bit wire. The polycrystalline electrode of an MIS type capacitor, the second layer polycrystalline layer 6 constituting a switching transistor and the Al wiring 8, which will be used as a word wire, are formed. As the N type semiconductor region is provided only at the region whereon the bit wire will be connected and the greater part of the bit wire is buried in an oxide film 9, the capacity of the bit wire is reduced and a large read-out potential difference can be obtained. |
