| 摘要 |
PURPOSE:To improve the characteristics and particularly the reverse direction characteristics of a Schottky barrier diode by forming the periphery of the diode of a structure in which P<+> is not injected. CONSTITUTION:A photoresist film 16 is formed on a polysilicon layer 15 before carrying out the ion implantation of P<+>. A window is opened at the film 16, to open the part corresponding to a Schottky barrier diode. Then, an ion implantation is performed with high density N type dopant (phosphorus) to form only the part 17 in an N<+> type region. Then, a photoresist film 16 is removed, and an aluminum layer 18 is then formed. |
