| 摘要 |
PURPOSE:To enable the design of heat dissipation in a semiconductor device by internally containing a current detecting resistor in an output transistor, thereby distinguishing between an electric power unit for handling a large current and a controller operated with a small current. CONSTITUTION:This semiconductor device has a semiconductor substrate including a transistor consisting of a base 11, an emitter 12 and a collector region 10, as well as a base electrode 14, an emitter electrode 15, a collector 16 corresponding to the base, the emitter and collector regions and other fourth electrode 18. Resistors 5 formed in the substrate are connected between the electrodes 15 and 18. A current detecting resistor 5 is thus contained in an output transistor 3, thereby eliminating a large current in a thick film circuit unit and preventing the difficulty due to disconnection of a wire caused by a swinging temperature. |
