| 摘要 |
PURPOSE:To obtain the wiring excellent in connection by a method wherein an electrode connection hole is provided on an insulating layer made up over a semiconductor substrate and an electode material is fitted in this hole and fused, and afterwards, the wirings overspreading on the insulating layer in contact with the electrode material is formed. CONSTITUTION:An insulating layer 14 and a PSG layer 18 are formed on a semiconductor substrate 11. Subsequently, after making up an opening hole 17 for contact use using a photoresist 19 as a masking material, aluminum layers 20 and 21 are formed by evaporation. Fusing the photoresist 19 and removing the aluminum layer 20, the aluminum deposit 21 for electrode use remains only. Following these processes, by fusing the aluminum within a nonoxidizing type gas, the surface is smoothed. Finally, depositing an aluminum layer to constitute a wiring layer and patterning, a wiring layer 22 which keeps good contact with the electrode 21 is formed. Because the surface of the electrode 21' is smoothed, the contact between the aluminum for use of wiring and the electrode 21' is kept complete. |
