| 摘要 |
PURPOSE:To treat all the semiconductor wafers, supported in a supporting groove, at the same processing rate by a method wherein shields are provided at locations separated from the semiconductor wafers positioned at the ends by a distance same as the pitch of the supporting groove. CONSTITUTION:Shields 21, provided with surfaces 21a facing the surfaces of two semiconductor wafers 8a and 8b, out of a multiplicity of semiconductor wafers, are located respectively at both ends of a supporting member 7. The shields 21 are installed, separated from the semiconductor wafers 8a and 8b by a distance same as the pitch P of a supporting groove 7b. It follows therefore that the surfaces of the semiconductor wafers 8a and 8b are covered by the shields 21 and that the surfaces of the other wafers 8 are covered by their neighboring semiconductor wafers 8. In this way, it may be so set that the processing rate for each of the semiconductor wafers 8 supported in the supporting groove 7a will be the same during a wafer processing period. |
