| 摘要 |
PURPOSE:To stable and readily bond a wire in a semiconductor device by mounting a hydrogen gas emission device at the end of a wire bonder, maintaining the position to be bonded at a high temperature immediately before wire bonding, and injecting hydrogen gas to activate the surface of the metal. CONSTITUTION:A gas injection device for injecting hydrogen gas in a spot is mounted on the conventional wire bonder. Hydrogen gas is injected in the state the position to be bonded is heated immediately before the bonding to meet the timing of the operation of sequentially bonding wires one by one by the wire bonder. Thus, the surface of the metal at the position to be bonded is destroyed at the oxidized film layer to become active, and can be readily bonded. Thus, the metal can be wire bonded sufficiently stably without using noble metal material at a lead and a leadframe. |
