| 摘要 |
PURPOSE:To facilitate the change-over of reaction gases and improve a controllability over a composition of a growing layer by a method wherein two or more growing feed gas reaction chambers having a base plate setting part and an independent opened and closed feeding hole stopper are arranged in the gas phase growth device. CONSTITUTION:Substrate bearing means 4 having InP substrate 3A mounted thereon is set in a reaction tube of gas phase growing device and there are provided the substrate setting part divided by the partition wall 11 and each of the gas feeding hole stoppers 14, 15. Then, Ga1 and In1A are arranged in the reaction tube, while there are provided a gas reaction chamber to which HCl gas is fed from the gas feeding pipes 5, 5A, and In1B is arranged in the gas reaction chamber. There is provided a gas reaction tube for use in feeding HCl gas at the gas feeding pipe 5B. AsH3 gas and PH3 gas are fed from the pipe 6, mixed with each other in the gas mixing chamber 10, while H gas is fed from the pipe 9 so as to remove the remaining gas. Thereby, it is possible to a reduce a change-over volume of reaction gases and improve a controllability over a composition of the growing layer.
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