| 摘要 |
PURPOSE:To contrive complete planar of a P type side photo incident system by burying polycrystal Si doped with high density in mesa grooves by an N type impurity wherein a surrounding P type layer is formed into N type by consisting the polycrystal Si as a diffusion source to form an N<+> diffusion layer. CONSTITUTION:A P type epitaxial layer 2 is formed on an N<+> type single crystal Si substrate 1 to form a predetermined shaped insulating film 4 for etching mask and mesa grooves are formed by mesa etching. Next, polycrystal silicon 10 is formed while doping an N type impurity with high density. Next, the polycrystal Si being located except the mesa grooves is removed by lapping. Next, the diffusion of the N type impurity is generated from the polycrystal Si 10 by heat treatment and a surrounding P type layer 2 is formed into N type to form an N<+> type diffusion layer 8. Next, the insulating film 4 is selectively eliminated to form a P<+> diffusion layer 3, electrodes 6, and a light reflection-proof film 12. |
