| 摘要 |
PURPOSE:To obtain the GaN light-emitting element having no mismatching defect and crystal distortion and also having a high intensity of light emission by a method wherein a ZnO film is grown on a substrate while it is being preferentially oriented in the prescribed direction and on which the crystalline GaN film controlled by the orientation axis of the ZnO film is formed. CONSTITUTION:The substrate 1 made of glass and the like is used to lead out a beam of light from the side of the substrate and on which the transparent electrode film 2, to be used as one of electrodes for the light emitting element such as In2O3, SnO2 and the like, is coated. Then, while the above is being oriented to the axial direction C with which a preferential orientation can most easily be performed, the ZnO film 3 having the intrinsic resistance of 10<2>-10<3>OMEGA/cm and the thickness of 0.2-0.3mum or thereabouts is grown by adding a donor. Subsequently, an excellent crystalline film 4 is obtained by epitaxially growing a GaN film 4 along the axis C having the preferential orientation of the film 3, on which an i type GaN film 5 is grown. After that a lead wire 7 is attached to a film 2 and a lead wire 8 is attached to a film 5 respectively through the intermediary of a metal electrode 6 such as Al and the like. |
