| 摘要 |
A semiconductor-glass composite material comprises at least one semiconductor bonded to a glass substrate, with the semiconductor layer having a strain epsilon </=0.3 per mil, and a dislocation density NV</=2x106 cm-2. In a process for producing the semiconductor-glass composite material, the semiconductor and glass are heated to a bonding temperature, bonded under pressure, and tempered at a temperature Ta such that the viscosity of the glass at Ta is 1012 to 1013.5 poise, and the following relationship holds: <IMAGE> wherein alpha G and alpha S are the coefficients of expansion of the glass and semiconductor, respectively, and T is temperature. The composite material is then cooled to room temperature.
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