| 摘要 |
PURPOSE:To prevent contamination from a heat source and a container, e.g., in a high pressure oxidizing process, by applying heat resistant coating on the inner wall of the pressure resistant container which encloses substrates, and heat-processing the substrate by a lamp hermetically sealed in a container. CONSTITUTION:A thermally oxidized film is formed on, e.g., Si substrates 10 at a high temperature and high pressure in the apparatus 1. On the wall of the pressure resistant container comprising a metallic chamber 2 and a lid 3, an SiO2 film obtained by oxidizing an NoSi2 sputtered film is formed, and the coating 20 is provided. The wafers 10 which are held by a boat 9 are placed on a table 8 in said container, and H2 and O2 are introduced from nozzles 6 and 7. Then wafers 10 are heated and oxidized by the lamp 4 hermetically sealed in the quartz tube 5. On this constitution, the introduction of contaminants at the high-temperature and high- pressure process can be prevented. This apparatus is suitable for processes such as nitridation, diffusion, and the like, in addn. to the oxidation. |
