| 摘要 |
PURPOSE:To form the insulating film with excellent quality on a semiconductor of thermally unstable compound of GaAs and the like, by mixing gases containing elements which react with each other, flowing the mixture on the surfaces of specimens, heating the specimens by the irradiation of infrared rays, and growing reacted compound on the surface. CONSTITUTION:For example, GaAs substrates 2 are placed on an Mo susceptor 6 and enclosed in a quartz reacting tube 1. SiH4 and O2, which are mixed at an appropriate mixing ratio, are introduced into the reacting tube 1, with N2 as carrier gas. The infrared rays 5 are uniformly irradiated on the specimen substrates 2 from a plurality of lamps 3 having parabolic reflecting mirrors 4 provided at the outside part of the reactor tube 1, and the temperature of the substrates is quickly increased to 400-500 deg.C, e.g., at a rate of 100-200 deg.C/sec. Thus an SiO2 film is formed on the surfaces. After the formation of the insulating film, the temperature of the substrate is further increased as required, and, e.g., activation annealing of implanted ions and the like can be performed in the reacting tube 1. In this method, the insulating film with excellent quality suitable for MOS elements and the like can be formed. |
