| 发明名称 |
Method of making junction isolated bipolar device in unisolated IGFET IC |
| 摘要 |
A bipolar device is formed in an N epitaxial layer region isolated from an N substrate and the remainder of the N epitaxial layer by a P surface ring and a buried P region. An N channel device is formed in the P surface ring and a P channel device is formed in the N epitaxial layer. A buried N region is formed in the buried P region using the same mask used to form the buried P region.
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| 申请公布号 |
US4311532(A) |
申请公布日期 |
1982.01.19 |
| 申请号 |
US19790061775 |
申请日期 |
1979.07.27 |
| 申请人 |
HARRIS CORPORATION |
发明人 |
TAYLOR, DAVID L. |
| 分类号 |
H01L21/74;H01L21/761;H01L27/06;(IPC1-7):H01L21/26;H01L21/02;H01L21/20;H01L29/72 |
主分类号 |
H01L21/74 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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