| 摘要 |
PURPOSE:To obtain a visual sensor having a simple structure and high sensitivity and resolution, by using photodiodes as photoelectric elements constituting picture elements. CONSTITUTION:Picture elements are formed of photodiodes each having a PN junction between an a-Si film 2 and an Si substrate 1 and being provided with an Al electrode 3 and an Au electrode 5 on the opposite sides. Between the cathodes of the photodiodes, an equivalent resistance is put by the a-Si film having very high resistivity of 10<8>OMEGA.cm, and they are insulated thereby from each other. Accordingly, no MOS transistor is required for insulating adjacent picture elements from each other. By closing sequentially switching elements fitted from outside to the cathode electrodes, a signal corresponding to a light entering a window 4 is taken out from the photodiode of each picture element, and on the occasion, a positive bias is impressed on the cathode side, while a negative bias is impressed, reversely to the above, on the anode side. |
