发明名称 METHOD FOR ELECTRON BEAM EXPOSURE AND APPARATUS USED IN SAID METHOD
摘要 PURPOSE:To control the amount of exposure without changing the conditions of an electron gun, by applying a high frequency voltage on an electron beam deflection device, vibrating the electron beam at a right angle, passing the beam through a screening plate having an opening, and controlling the pulse width of the pulse shaped beam. CONSTITUTION:The high frequency voltage is applied on the reflecting plates 11 of the electron beam exposing apparatus, and the high frequency alternating field is formed. The electron beam 2 is deflected by the electric field and vibrate as shown by an arrow 16. The electron beam 2 passes through a screening plate 14 when the beam moves from A to B. When the electron beam exceeds B, it is screened by the screening plate 14, and is not sent out. This state continues until the beam moves from B to C and B again. The electron beam passes the opening 17 when it moves from B to A and to D. The beam is not sent out when it moves from D to E and D again. In this method, the electron beam is transformed into a pulse shaped beam, and the amount of exposure can be readily and precisely controlled without changing the conditions of the electron gun.
申请公布号 JPS577930(A) 申请公布日期 1982.01.16
申请号 JP19800082386 申请日期 1980.06.18
申请人 FUJITSU LTD 发明人 FURUKAWA YASUO;GOTOU YOSHIAKI;IGAKI SEIGO
分类号 H01L21/027;H01J37/304;(IPC1-7):01L21/30 主分类号 H01L21/027
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