| 摘要 |
PURPOSE:To prevent the disconnection of the second layer wiring by smoothing the shape of a stage section of a phosphorus silicate glass (PSG) film of a layer insulating film in multilayer wiring structure. CONSTITUTION:The first layer wiring 3 in Al is formed on the insulating film 2 covering the surface of a semiconductor substrate 1 into which an element is made up. The PSG film 4 is built up on the wiring 3. A stage section 4' corresponding to the stage section of the first layer wiring 3 is built up at that time. Ions are injected onto the PSG film 4 from the direction vertical to the surface of the substrate, and a damage layer 5 is formed on the surface. The stage section of the PSG film 4 is made a gently inclined shape by etching the damage layer 5 by using an etching agent of hydrogen fluoride. The second layer wiring 6 is made up on the PSG film 4. Accordingly, the danger of the disconnection of the second layer wiring is removed. |
