| 摘要 |
PURPOSE:To simplify the manufacture and to stabilile an interface between an active layer and a gate insulating film by a method wherein active layer and the gate insulating film are constituted of amorphous silicon. CONSTITUTION:The N type semiconductor amorphous silicon film 12 is made to grow on a glass substrate 11, and a drain electrode 14 and a source electrode 13 are formed and adhered thereon using a metal mask. Then a semiinsulating amorphous silicon film is made to grow thereon, and the gate insulating film 15 is formed by the process of application of a photo resist, exposure and etching. Moreover a gate electrode 16 is formed on the gate insulating film 15 using a metal mask. |
