| 摘要 |
PURPOSE:To take out generating charges by photoirradiation with good efficiency by chemically applying the removal of etching to the circumference of a scribe line on the surface of an Si substrate wherein V or pedestral-shaped grooves are provided on the surface or rear of the substrate and a pair of electrodes are oppositely arranged. CONSTITUTION:A scribe line 5 is provided on the (100) surface of a P type Si substrate 1 to apply SiO2 masks 8, 7, 11, 12 and anisotropic etching is done by controlling time and grooves 9 having V-shaped concave sections and pedestral convex sections are formed to apply the removal of etching to the cracks of a scribe region 5. An Al electrode 2 is evaporated at the rear side by removing the masks and an Si3N4 film 3 is formed on the surface by a plasma nitride method and ohmic contact is also done to the al at the rear and Si substrate 1 by performing sintering. Next, an opposite electrode 4 composed by an Al and Ni multilayer film, a pad 11 and a lead 22 are provided on the flat section on the surface to cover the electrode 4 and the pad 11 by an SiO2 relfection-proof film 21. In this composition, a device having little leakage and high photoelectric conversion efficiency can be obtained. |
