| 摘要 |
PURPOSE:To reduce a floating capacity of GaAs Schottky varactor diode by a method wherein a metal piece having an area less than that of an electrode which shows another area less than a sectional area of part of the connection wire. CONSTITUTION:An electrode 1 and Au layer 4 are formed on GaAs substrate through Pd layer 3 to show a diameter of about 10mum. Then, Au circular plate 7 having a diameter of about 5 to 7mum and a thickness of about 10 to 15mum is adhered to a flat leading end sapphire style 8 and thermally pressed on Au electrode 1. The chip formed in the style may be mounted in a case, Au wire is bonded to the circular plate 7 to make, for example, an element for mill-wave parametric amplifier. Since an etching step after the bonding may be eliminated, a cutting of Au wire may be prevented, resulting in enabling a provision of diode having a less floating capacity at the bonding part. |
