发明名称 Etching a circular opening in a FCC monocrystal - esp. an intermetallic compound using a carefully oriented polygonal mask
摘要 <p>Method of obtg. hollows of circular contour in monocrystals of intermetallic cpds. crystalline in the face centred cubic system is described. The principal surface of the body is covered with a masking film and a window is opened in the mask, through which the body is etched. Specifically the principal surface is in a (100)plane, and the window is cut in the shape of a regular polygon so that first and second consecutive sides each make an angle alpha with a direction of the family (011) equal to pi/n where n is the no. of skin of the polygon. Pref. the polygon is and octagon and the angle alpha is pi/8. The under etching which is prior art caused etching through a circular mask to give irregular shapes, esp. elliptical is here tunnel to advantage in that the angles disappear giving a circular aperture after etching.</p>
申请公布号 FR2486104(A1) 申请公布日期 1982.01.08
申请号 FR19800015001 申请日期 1980.07.04
申请人 RADIOTECHNIQUE COMPELEC 发明人 CLAUDE MARIE
分类号 H01L21/306;(IPC1-7):23F1/02;03F7/00;01L33/00;01L31/18;09K13/00 主分类号 H01L21/306
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