| 摘要 |
A semiconductor device comprising a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a bonding pad formed on the first insulating layer, a conductive layer formed on the first insulating layer and adjacent to the bonding pad, and a second insulating layer formed to cover the conductive layer characterized in that the surface of the second insulating layer formed on and near the conductive layer is made at the same level as or lower than the surface of the bonding pad. |
