| 摘要 |
PURPOSE:To obtain a semiconductor laser having extremely high reproducibility and uniformity by removing only both sides of an active layer in groove shape by etching, forming a grown layer on the surface of the etched layer and completing the burying of the side surface of the active unit. CONSTITUTION:An N type InP layer 10 of clad layer, an In0.77Ga0.23As0.51P0.49 layer 11 of active layer and a P type In layer 12 of the second clad layer are epitaxially grown in the first liquid phase growth on an N type InP semiconductor substrate 9. Then, an SiO2 18 is formed only on the stripe region on the upper surface side of the layer 12, and the layer 12 of the side is removed. The remaining layer 12 and the layer 11 are again etched, a groove 13 reaching the layer 10 is formed, and the surface of the layer 10 at only this part is exposed. Then, a photoresist film is removed, the liquid phase epitaxial growth of the second stage is performed, and N type InP layer 14 is grown. Further, a P type electrode 16 is formed via an SiO2 film 15, and N type electrode 17 is formed on the back surface of the substrate 9, and a buried type semiconductor laser can be obtained. |
