发明名称 1-Out-of-N decoder for a semiconductor memory or the like, method of selecting one out of N lines in a matrix and address decoding circuit arrangement
摘要 In the case of an electrically programmable memory matrix, which has rows and columns of floating-gate memory cells, output lines and earth lines are alternately used between the cell columns, which produces an arrangement with a virtual earth. A row is selected by one part of an address input signal, and a column is selected by a further part. An output line on one side of the selected column is activated, and an earth line is activated on the other side. A differential sense amplifier responds to the voltage on the selected output line and to a reference voltage. The number of transistors required in the decoder for the row selecting function is greatly reduced by using predecoders, which carry out a 1-out-of-4 selection for each pair of address bits, one of these selection output signals then being used to activate N multiplexers, and all the others being used as input signals of a decoder having N outputs to the multiplexers. <IMAGE>
申请公布号 DE3103807(A1) 申请公布日期 1981.12.24
申请号 DE19813103807 申请日期 1981.02.04
申请人 TEXAS INSTRUMENTS INC., 75222 DALLAS, TEX., US 发明人 KLASS, JEFFREY M., 77471 ROSENBERG, TEX., US;REED, PAUL A., 77099 HOUSTON, TEX., US;RIMAWI, ISAM, 77031 HOUSTON, TEX., US
分类号 G11C16/08;G11C16/10;H03M7/22;(IPC1-7):G11C17/04;G11C8/00;H03K13/00 主分类号 G11C16/08
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