发明名称 |
BIPOLAR DYNAMIC MEMORY CELL |
摘要 |
This describes a novel bipolar dynamic cell especially useful as a Random Access Memory Cell. In the described cell a PNP transistor drives an NPN transistor so that information is stored at the base node of the PNP transistor. By using the PNP transistor as a read transistor and the NPN as a write transistor the cell, when made in integrated form, utilizes the cell isolation capacitance to enhance the stored information without increasing the parasitic capacitances in the cell thereby obtaining greater contrast between 0 and 1 signals than can be obtained in prior art cells. This cell is especially useful in memory arrays. |
申请公布号 |
DE2861220(D1) |
申请公布日期 |
1981.12.24 |
申请号 |
DE19782861220 |
申请日期 |
1978.12.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EL-KAREH, BADIH;GERSBACH, EDWIN JOHN;HOUGHTON, JAMES RUSSELL |
分类号 |
G11C11/405;G11C11/39;G11C11/403;H01L21/8229;H01L27/07;H01L27/102;(IPC1-7):G11C11/24;G11C11/34;H01L27/06 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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