| 摘要 |
PURPOSE:To obtain a flat (100) plane in an anisotropic etching for a silicon sigle crystal by adding a surfactant to an etchant. CONSTITUTION:An oxidized film is formed on an Si single crystalline substrate having a (100) plane, a rectangular window such as a gate of an MOSFET is opened at the film, the (100) plane is exposed, and is etched. An etchant employs an aqueous ammonia saturated solution, and 0.01vol% of surfactant is mixed with the aqueous solution. Thus, it can eliminate the projection generated on the etching surface to form a flat etching surface. |
