| 摘要 |
PURPOSE:To obtain the reflecting surface of a semiconductor laser without damage by removing except the creeping reflecting surface forming part on the cleavage surface of a laser crystal to form recesses on the surface, and decreasing the thickness of a nonexciting part, removing the cleavage line part of the metallic electrode on the back surface to be readily divided. CONSTITUTION:The laminated electrode 5 of Ti-Pt-Au on a P type InP4 is selectively removed to open recesses 8 along the cleavage direction <110> at the nonexciting part, is ion etched, and recesses 9 reaching an N type InP substrate 1 are formed. The recess 9 has a width A of approx. 30mum, and an interval C of approx. 40mum. Then, the laminated electrode of Au.Ge-Ni-Au on the back surface of the substrate 1 is selectively removed to form grooves 11 parallel to the recesses 9. When the grooves 11 are pressed toward the surface along the cleavage direction, the crystal can be readily divided and stress is not concentrated to the exciting region, and the reflecting surface is not damaged. |
