| 摘要 |
PURPOSE:To form high resistance having a low resistance to temperature coefficient for an integrated circuit by injecting high density reverse conductive type impurity ions in the limited region on the surface of a semiconductor and annealing it with a laser to form a resistor. CONSTITUTION:In an integrated circuit, a resistor used for a load or a constant current source or the like is formed by an ion injection process. The ion injection condition is set at energy so that the spead (2DELTARP) of the impurity is less than 500Angstrom and is set at dosage so that the surface density of the reverse conductive type impurity is higher than 10<19>cm<-3>. The heat treatmend conducted after the injection is performed by locally heating by the radiation of a laser or electron beam so that the impurity may not be widely diffused out of the injected region. The injecting condition and the sheet resistance value after the laser annealing are listed for boron and phosphorus in a table, and the resistant to temperature coefficient can be decreased larger as the surface density is increased larger. Thus, high resistance for the integrated circuit can be formed with preferable temperature characteristics and can be particularly adapted for low current circuit or the like. |
