发明名称 Glow discharge process for coating e.g. with polymer or silicon - uses gas reservoir behind counter electrodes with large open perforated area
摘要 <p>Substrate coating process involves placing substrates (I) near an electrode, placing a counter-electrode (II) at a uniform distance from (I), changing gas (III) chemically by a capacitive glow discharge, passing (III) through holes in (II) and exhausting spent (III). The novel features are that (II) is so strongly perforated that (III) can diffuse through holes in both directions, a (III) reservoir bounded by (II) is provided and (III) is let into and sucked out of this reservoir. The process is specified for the prodn. of a glow polymer film from monomeric gas or an amorphous Si film from silane. It is suitable for coating a large amt. of (I) in series operation and frequent cleaning of deposits from (II) is avoided.</p>
申请公布号 DE3020815(A1) 申请公布日期 1981.12.10
申请号 DE19803020815 申请日期 1980.06.02
申请人 SIEMENS AG 发明人 PACHONIK,HORST,DIPL.-PHYS.;SEEBACHER,GERHARD,DR.PHIL.
分类号 C23C16/54;(IPC1-7):23C11/00 主分类号 C23C16/54
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