发明名称 |
Method of making a thin film. |
摘要 |
<p>A method of making a thin film by vapor depositing a source material onto a substrate, in which a mask plate is provided between the source material and the substrate at a location such that d < 5 l in which d denotes a space between the mask plate and the substrate and l denotes a mean free path of evaporated particles, or s < l in which s denotes a space between the mask plate and the source material. The mask plate moves relatively to the substrate and/or the source material during the deposition. The configuration of the mask plate is arranged so as to equalize deposition rates through the above-mentioned movement.</p> |
申请公布号 |
EP0041083(A1) |
申请公布日期 |
1981.12.09 |
申请号 |
EP19800301798 |
申请日期 |
1980.05.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
发明人 |
OHJI, KENZO;YAMAZAKI, OSAMU;WASA, KIYOTAKA;HAYAKAWA, SHIGERU |
分类号 |
C23C14/04;C23C14/22;H05K3/14;(IPC1-7):23C13/08;23C15/00 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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