发明名称 Method of making a thin film.
摘要 <p>A method of making a thin film by vapor depositing a source material onto a substrate, in which a mask plate is provided between the source material and the substrate at a location such that d &lt; 5 l in which d denotes a space between the mask plate and the substrate and l denotes a mean free path of evaporated particles, or s &lt; l in which s denotes a space between the mask plate and the source material. The mask plate moves relatively to the substrate and/or the source material during the deposition. The configuration of the mask plate is arranged so as to equalize deposition rates through the above-mentioned movement.</p>
申请公布号 EP0041083(A1) 申请公布日期 1981.12.09
申请号 EP19800301798 申请日期 1980.05.30
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD 发明人 OHJI, KENZO;YAMAZAKI, OSAMU;WASA, KIYOTAKA;HAYAKAWA, SHIGERU
分类号 C23C14/04;C23C14/22;H05K3/14;(IPC1-7):23C13/08;23C15/00 主分类号 C23C14/04
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