| 摘要 |
<p>PURPOSE:To form long and narrow cleavage bars by arranging two kinds of materials having different thermal expansion coefficients so that they can be fixed with a specified distance being provided, holding a semiconductor laser wafer at the side of which scratches are made with a specified interval being provided beforehand between the two materials, and heating the entire body to bend it. CONSTITUTION:The scratches 2 are made on the laser wafer 1, wherein diffused metallization is applied on GaAs/AeGaAs double heterogeneous epitaxial wafer, by a diamond point and the like, with the equal interval being provided. The wafer 1 having said scratches 2 is placed on a metal 3 whose thermal expansion coefficient is small with the P side up, and a metal 4 whose thermal expansion coefficient is large is intimately contacted on the wafer 1. At this time a spacer is inserted between a gap 5 between both metals 3 and 4, and fixed. The fixed device is put into an oven wherein a specified temperature is maintained and remained for one minute. Then, the metals 3 and 4 are heated and bent, and the long and narrow cleavage lines 6 whose width is several hundreds mum or less can be formed.</p> |
