SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

A semiconductor device with deep grid accessible via the surface having a silicon substrate and comprising U-shaped grooves. The upper parts of the side walls of these grooves are insulated by a silica layer and the lower parts of these grooves connect up with overdoped zones. Polycrystalline silicon provides ohmic contact between selected positions on the upper face of the transistor and the grid layer.