LIGHT-SENSITIVE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To increase the trigger sensitivity by a method wherein a concave is formed in the first semiconductor layer so as to reach near a P-N junction constructed by said layer and the second semiconductor layer. CONSTITUTION:The concave 10 reaching near the junction of an N type base layer 2 and a P type base layer 3 from the surface of the layer 3 is formed on the layer 3. The concave 10 is coated on the surface with polyamide varnish and hardened at the temperature of 150-400 deg.C to form a light receiving unit 18. The distance from the light receiving unit 18 to the depletion layer formed by the N type base layer 2 and the P type base layer 3 is shortened, thereby reducing the amount of light absorbed by a silicon substrate 5.