| 摘要 |
A layer (20) of CdxHg1-xTe is grown on the surface of a substrate (21) by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate (21) is placed in a vessel (16) containing a mercury bath (19) with the vessel and bath at a suitable pressure and a temperature below the alkyl decomposition temperature. Hydrogen is passed through bubblers (6, 7, 25) separately containing alkyls of cadmium, telluride, and if required a dopant, into the vessel (16). The substrate (21) is independently heated (18) above the temperature of the vessel (16) so that the alkyls decompose on the substrate (21). The substrate may be CdTe, a II-VI compound or mixed II-VI alloy. The alkyls may be dimethyl cadmium, diethyl cadmium, dipropyl cadmium, dimethyl telluride, diethyl telluride, dipropyl telluride, dibutyl telluride, etc., or hydrogen substituted tellurium alkyls such as hydrogen ethyl telluride, etc. |
