| 摘要 |
<p>Process for greatly simplifying the production of certain types of semiconductor devices, e.g., lasers. In one embodiment of the invention, a stripe geometry is fabricated in a laser-diode structure having a plurality of epitaxial layers, including in tandem a p-doped semiconductor layer (4), a moderately n-doped semiconductor layer (5) and a heavily p+-doped layer (6), by focusing laser radiation on the n-doped semiconductor layer (5). The laser radiation is chosen to have a wavelength which passes through the p+-doped layer (6) without absorption. When the laser radiation is absorbed in the n-doped layer, heat is generated which causes diffusion of p-dopant from the two adjacent layers to convert the exposed region to p-type. As the laser beam is scanned, a stripe having a forward pn-junction for laser action is formed. </p> |
