| 摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture a TFT capable of operating at a high speed by a method wherein a crystalline semiconductor film which controls a position and a size of crystal particles is manufactured and the crystalline semiconductor film is used for a channel formation region of the TFT. SOLUTION: After an organic resin film is formed so as to come into contact with a substrate 1 having translucence, the organic resin film is patterned to be in a predetermined profile, and an inorganic insulation film 3 is formed so as to coat the organic resin film 2, and an amorphous semiconductor film 4 is formed so as to come into contact with the inorganic insulation film. In the amorphous semiconductor film 4, a first region 5 existing above the organic resin film 2 is successively provided so as to be pinched between second regions 5b not existing above the organic resin film 2 via the inorganic insulation film. At this time, an island-like amorphous semiconductor film 5 is formed so that the second region has a width of 0.5μm to 5μm from an end of the first region. And, laser beams are applied on the island-like amorphous semiconductor film, thereby obtaining a crystalline semiconductor film 7 which controls a position and a size of crystal particles.</p> |
