| 摘要 |
PURPOSE:To obtain high sensibility by a device wherein a recess is formed on at least one surface of a semiconductor substrate, and a junction area is formed in this recess to make stress locally concentrated. CONSTITUTION:A V-shaped groove 2 is formed on the surface of an N type silicon monocrystalline substrate 1 with anisotropic etching, and a P type diffusion area 3 is formed crossing the V-shaped groove 2. An N type diffusion area 4 is formed on the P type diffusion area 3. Then, an insulative film 5 such as silicon dioxide or silicon nitride is formed on the P type and N type diffusion areas 3, 4. When pressure P is applied, external stress is concentrated on the bottom of the V-shaped groove 2, so that an amount of distorsion is increased and sensibility is improved. |
