| 摘要 |
PURPOSE:To permit rapid modulation without changing the emitting position of a laser beam emitted at the center of an active layer by a laser wherein the number of carriers injected into the center of the active layer is controlled. CONSTITUTION:An N-GaAlAs layer 2, P-GaAlAs layer 5 and P-GaAs layer 7 are grown up in turn on a substrate 1, and positive and negative electrodes 8, 9 are provided thereto. Then, N-GaAlAs layers 4, 6 and electrodes 12, 13 are formed. When reverse biasing voltage is applied between the electrode 9 and the electrodes 12, 13 commonly connected, an N-channel junction type field effect transistor with the electrodes 12, 13 as gate electrodes is formed and depletion layers 14, 15 are produced in the N-GaAlAs layer 2 locating at the center from the both sides therefrom. By varying a level of the reverse biasing voltage, output of a laser beam is modulated. |
