| 摘要 |
<p>An integrated circuit device for writing and reading information is disclosed, the integrated circuit device comprising an array of plural non-volatile memory elements (2-3) of ihsulated-gate field effect type formed on a semiconductor substrate (1) of one conductivity type, plural sets (5-12) of two complementary insulated-gate type field effect transistors respectively of P-channel type and N-channel type formed on the substrate which constitute a control circuitforthe memory elements, and a long and narrow semiconductor region (40-41) of one conductivity type which has an impurity concentration higherthan that of the substrate (1) is formed between the array (2-3) and the control circuit (5-12) in a surface region of the substrate (1); wherein a predetermined voltage is directly applied to the semiconductor region (40-41)</p> |
