MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To contrive the improvement of driving capability and switching characteristics by providing an emitter in the source at a P-channel side wherein a BIP consisting a source and a substrate as a base and a collector respectively are incorporated in a CMIS without accompanying an increase of area. CONSTITUTION:A P well 22 is provided in an N type Si substrate 21 and a P type source 271 and a drain 272 are provided at the substrate side and an N type source 291 and a drain 292 at a P well side to compose a CMIS. A BIP consisting the source 271 and the substrate 21 as a base and a collector respectively is composed by forming an N type emitter 32 in the source 271 at the P channel side. The CMIS structure is formed by a self allignment process by using an Si gate technique. In this way, the BIP improving driving capability and switching characteristics can incoporate in the CMIS without requiring an excessive area and the improvement of characteristics can be attained without missing high density.