| 摘要 |
PURPOSE:To provide a method of fabrication of a semiconductor mechanical sensor capable of ensuring high sensitivity or miniaturization of the sensor avoiding destruction of a thin-walled distortion generating portion. CONSTITUTION:Before a back chief surface of a semiconductor substrate 41 (including an epitaxial layer 42) is rendered to first etching to form a lower separation groove 10, a resist film 49 is rendered to photopatterning on a chief surface of the semiconductor substrate 41 excepting an upper separation groove formation intended region. Accordingly, there is eliminated a procedure where a predetermined region of the semiconductor substrate 41 is thin-walled through the first etching, and thereafter the resist film 49 is applied by spinning on the chief surface of the semiconductor substrate 41 for photopatterning. Thus, the thin-walled portion is prevented from being destroyed owing to vacuum chucking of a wafer upon the resist film 49 being spinning applied. |
