| 摘要 |
The present invention discloses a semiconductor device and its manufacture by which damages, such as cracks, generated by the heat of melting of a fuse that is employed for isolating a circuit from the other circuits, can be blocked from propagating into other parts of the semiconductor device. A lower protective film formed on an oxide film provided on a substrate, has a width larger than that of the fuse, and blocks the propagation of damages generated at melting of the fuse. A first insulating film formed on the oxide film so as to cover the lower protective film, has two grooves reaching the lower protective film that is formed so as to surround the fuse. The fuse is formed in the region between the two grooves formed in the first insulating film. A second insulating film is formed on the first insulating film so as to cover the fuse, and has grooves connected to the grooves formed in the first insulating film. A side-face protective film is formed within the grooves formed in the first and second insulating films and blocks the propagation of damages generated at melting of the fuse. |
