Thin-film magnetic bubble domain detection device and process for manufacturing the same

摘要

A thin-film bubble domain detection device for use in a magnetic bubble memory comprises two metallic conductor leads formed with sloped opposing edges on the SiO2 spacer layer of a garnet substrate and a permalloy magnetoresistive sensing element formed therebetween. A method for making the device uses a first photoresist mask in ion milling in a conductor layer to expose an area of spacer, followed by deposit of a permalloy film over the substrate and onto the exposed spacer before removal of the first mask. Extraneous permalloy is lifted off when the first photoresist is removed. A second mask is used to simultaneously ion mill the final conductor lead and sensing element configurations. In one embodiment, first and second dielectric layers are added to the device to improve bubble propagation and provide an easily planned product.