| 摘要 |
A lens design for submicron photolithography images a mask (21) onto a semiconductor wafer (23) using light in the far ultraviolet. Illustratively, the lens design is a modified Dyson imaging system comprising a thick plano-convex lens (31), a beam splitter, adjacent to the planar surface of the plano-convex lens comprising two right angle prisms (34, 35) separated by a dielectric interface (36), and an aspherical mirror (32) located on the convex side of the lens. Stress-induced birefringence is used to rotate the plane of polarization of the object radiation.
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