| 摘要 |
PURPOSE:To enable to obtain the wiring passage having a stabilized excellent electric connection by a method wherein an interlayer insulating layer is constituted by an Si oxide film and an Si nitriding film. CONSTITUTION:An Si oxide film 302 is coated on the surface of an Si substrate 301. An aperture 303 is provided on the film 302 and a wiring passage 304 is formed adjoining to the aperture 303. Then, an Si oxide film 305 and an Si nitride film 306 are coated on the substrate 301 successively. Then, the film 306 is selectively removed down to the film 305 by performing an etching. With the etching performed at this time, the speed of etching performed on the Si oxide film is sufficiently slow as compared with the Si nitriding film, so the surface of the wiring passage 304 is not exposed while the film 306 is being etched. Then, the film 304 is etched as deep as to the wiring 304. Then, photoresist is exfoliated and a wiring 308 is formed on the substrate 301 including the conducting hole 307. As a result, the conductive hole having a stabilized and excellent electric connection can be obtained. |
