| 摘要 |
PURPOSE:To improve the photoelectric converting efficiency of a photoelectric conversion semiconductor device by forming the chip of an MIS type semiconductor device in a trapezoidal shape or inverted trapezoidal shape at the side periphery, thereby reducing the reflection on the semiconductor surface of the incident light. CONSTITUTION:Silicon oxide films 2, 3 are formed on both side surfaces of a monocrystalline semiconductor 1, the film 2 of the photoelectric converter region 4 is retained, and the oxide film of the other isolated region 4' is removed. After a V-shaped groove 5 is formed then at the region 4', the films 2, 3 are removed. Subsequently, the semiconductor 1 is dipped in anisotropic etchant, and numerous V-shaped grooves having a height of 0.03-20mum are formed at random. Then, semi-insulating films 8, 9 are formed on the grooves 6, and further elecrode 10, Mg electrode 12 and aluminum surface layer 13 are formed thereon. |
