| 摘要 |
PURPOSE:To form a film having better characteristics on a supporting body with a better adhesivity and reproducibility by accumulating the film depending on a discharge under a reduced pressure on the condition that the temperature of the supporting body goes up and down repeatedly. CONSTITUTION:A supporting body is arranged in a film accumulating device and an SiM4/H2 mixture gas is introduced thereinto under a reduced pressure (for example, 0.2torr). Then, a high frequency is applied and a hydrogenated amorphous Si grows on the supporting body under a discharge. In the process, the temperature of the supporting body goes up and down repeatedly (t1=15min and t2=18min) between the upper limit T1 (250 deg.C) and lower limit T2 (50 deg.C). A film having excellent characteristics can be obtained easily with an excellent adhesivity on the supporting body and a better reproducibility though greater in thickness. |
